On the permanent components of negative bias temperature instability

Author

Djezzar, Boualem ; Tahi, Hakim ; Benabdelmoumene, Abdelmadjid ; Chenouf, Amel ; Goudjil, Mohamed

Author_Institution

Microelectron. & Nanotechnol. Div., Centre de Dev. des Technol. Av. (CDTA), Algiers, Algeria

fYear

2013

fDate

15-18 Dec. 2013

Firstpage

1

Lastpage

4

Abstract

We have analyzed NBTI-induced interface-trap (ΔN_it) and border-trap (ΔN_bt) creation with respect to NBTI stress conditions using on the fly oxide trap (OTFOT) method. These type of traps are both NBTI permanent components. We have found that the exponent, n of ΔN_it tends to saturate with stress temperature. However ΔN_bt shows an opposite behavior. Also, ΔN_bt/ΔN_it ratio have revealed that ΔN_it dominates at lower stress conditions, followed later by ΔN_bt domination at higher stress conditions. The saturation value depends on temperature and electric field. Such behavior of NBTI-induced permanent components seems to progress from the interface to the interfacial sub-oxide region.

Keywords

MOSFET; interface states; negative bias temperature instability; semiconductor device reliability; NBTI permanent component; NBTI stress conditions; NBTI-induced interface-trap; OTFOT method; PMOSFET; border-trap creation; electric field; fly oxide trap method; interfacial sub-oxide region; negative bias temperature instability; saturation value; stress condition; stress temperature; Reliability; Silicon; Stress; NBTI degradation; OTFOT; fast and slow border trap; interfacial layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2013 25th International Conference on

Conference_Location

Beirut

Print_ISBN

978-1-4799-3569-7

Type

conf

DOI

10.1109/ICM.2013.6734952

Filename

6734952