DocumentCode :
3221865
Title :
A study on the properties of interlayer low dielectric polyimide during Cl-based plasma etching of aluminum
Author :
Kim, Sang Hoon ; Moon, Ho Sung ; Woo, Sang Gyun ; Ahn, Jinho
Author_Institution :
Dept. of Mater. Eng., Hanyang Univ., Seoul, South Korea
fYear :
1999
fDate :
6-8 July 1999
Firstpage :
152
Lastpage :
153
Abstract :
Al metallization on polyimide is expected to be used in advanced device structures. Since Al requires Cl-based plasma etching and a F-based plasma corrosion prevention process, the authors investigate the effects of various plasmas on polyimide properties. They find that:1) Cl plasma can be used to pattern Al metals on polyimide but over-etching might cause an increase in the dielectric constant of the polyimide film. 2) SF/sub 6/ plasma treatment is effective in replacing Cl with F, so minimization of the post-etching corrosion problem is expected. In addition, the dielectric constant of polyimide decreases after exposure to SF/sub 6/ plasma. 3) Cl and F atoms form chemical bonds with polyimide, as were analyzed by FTIR and XPS. 4) The etch rate of polyimide is much higher with SF/sub 6/ plasma as compared to Cl/sub 2/ plasma. Thus minimum exposure to SF/sub 6/ plasma for post-etching corrosion prevention is needed.
Keywords :
Fourier transform spectra; X-ray photoelectron spectra; bonds (chemical); corrosion protection; dielectric thin films; infrared spectra; permittivity; plasma materials processing; polymer films; sputter etching; Al; Al metallization; Cl; Cl-based plasma etching; Cl/sub 2/; Cl/sub 2/ plasma; F-based plasma corrosion prevention process; FTIR spectra; SF/sub 6/; SF/sub 6/ plasma treatment; XPS; advanced device structures; chemical bonds; dielectric constant; etch rate; interlayer dielectric; polyimide film; post-etching corrosion prevention; Chemical analysis; Corrosion; Dielectric constant; Etching; Metallization; Plasma applications; Plasma chemistry; Plasma devices; Plasma properties; Polyimides;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
Type :
conf
DOI :
10.1109/IMNC.1999.797522
Filename :
797522
Link To Document :
بازگشت