Title :
In situ monitoring of semiconductor processes using synchrotron radiation [growth and cleaning]
Author_Institution :
Res. Inst. for Sci. Meas., Tohoku Univ., Sendai, Japan
Abstract :
In this review paper, discussion is focused on the in-situ monitoring of gas source molecular beam epitaxy (GSMBE) and photon-induced hydrogen removal on Si surfaces using synchrotron radiation photoelectron spectroscopy.
Keywords :
X-ray photoelectron spectra; chemical beam epitaxial growth; elemental semiconductors; hydrogen; process monitoring; reviews; semiconductor growth; silicon; surface cleaning; GSMBE; Si surfaces; Si:H; gas source molecular beam epitaxy; in situ monitoring; photon-induced hydrogen removal; review; semiconductor processes; synchrotron radiation; synchrotron radiation photoelectron spectroscopy; Electron beams; Electron emission; Energy measurement; Hydrogen; Infrared spectra; Polarization; Radiation monitoring; Spectroscopy; Strontium; Synchrotron radiation;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797531
