Emission characteristics of amorphous silicon field emitter arrays sealed in a vacuum package

Author

Gamo, H. ; Kai, T. ; Kanemaru, S. ; Itoh, J.

Author_Institution

Electrotech. Lab., Ibaraki, Japan

fYear

1999

fDate

6-8 July 1999

Firstpage

184

Lastpage

185

Abstract

A new and simple vacuum package has been designed and fabricated for measuring field emitter array (FEA) properties in practical use. We have measured emission characteristics of a-Si FEAs sealed in the vacuum package for the first time. Very stable emission current with fluctuations of less than 2% has been obtained at the TFT-FEA sealed in the vacuum package. From the experimental results, the TFT-FEA was found to be very promising for high performance applications, such as FEDs.

Keywords

amorphous semiconductors; electron field emission; elemental semiconductors; field emission displays; seals (stoppers); semiconductor device packaging; silicon; vacuum microelectronics; Si; TFT-FEA; amorphous silicon; current stability; field emission display; field emitter arrays; sealed package; stable emission characteristics; vacuum package; Amorphous silicon; Anodes; Field emitter arrays; Gettering; Glass; Indium tin oxide; Packaging; Seals; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Conference_Location

Yokohama, Japan

Print_ISBN

4-930813-97-2

Type

conf

DOI

10.1109/IMNC.1999.797538

Filename

797538