Title :
An analytical transit time model for short channel MOSFET´s
Author :
Kasemsuwan, Varakom
Author_Institution :
Dept. of Electron., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
Abstract :
An analytical transit time model for short channel MOSFETs is presented. Several second order effects such as short channel and narrow width effects, mobility degradation, parasitic drain and source resistance, velocity saturation and channel length modulation are included in the model. The model shows good agreements with experimental and two dimensional numerical data over a wide range of biasing conditions
Keywords :
MOSFET; carrier mobility; electric resistance; semiconductor device models; 2D numerical data; analytical transit time model; biasing conditions; channel length modulation; mobility degradation; narrow width effects; parasitic drain resistance; parasitic source resistance; second order effects; short channel MOSFETs; short channel effects; velocity saturation; Analytical models; Cutoff frequency; Degradation; Electric resistance; MOSFET circuits; Microprocessors; Numerical simulation; Poisson equations; Predictive models; Voltage;
Conference_Titel :
Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on
Conference_Location :
Guoman Port Dickson Resort
Print_ISBN :
0-7803-6430-9
DOI :
10.1109/SMELEC.2000.932436
