A digital filter model for time-domain analysis of the two-band model [resonant interband tunneling diodes]

Author

Tsukui, Y. ; Suzuki, M. ; Sanada, H. ; Nagai, N.

Author_Institution

Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan

fYear

2000

fDate

2000

Firstpage

90

Lastpage

94

Abstract

Resonant interband tunneling (RIT) diodes show a very high peak to valley ratio, and have been expected to be high speed devices. This paper presents an equivalent circuit for the two-band model, which describes the behavior of electron waves in RIT structures and derives digital filters which simulate the time evolution of electron waves in RIT structures. The digital filters derived have advantages in terms of numerical stability and parallel realization. In addition, a multi-grid algorithm and an absorbing boundary are presented in order to achieve efficiency for the digital filter. Finally, an example of simulation is shown

Keywords

digital filters; digital simulation; equivalent circuits; numerical stability; resonant tunnelling diodes; semiconductor device models; time-domain analysis; RIT diodes; RIT structures; absorbing boundary; digital filter model; digital filters; electron wave time evolution simulation; electron waves; equivalent circuit; high speed devices; multi-grid algorithm; numerical stability; parallel realization; peak to valley ratio; resonant interband tunneling diodes; simulation; time-domain analysis; two-band model; Circuit simulation; Digital filters; Electrons; Equivalent circuits; Numerical stability; Parallel processing; Resonance; Time domain analysis; Tunneling; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on

Conference_Location

Guoman Port Dickson Resort

Print_ISBN

0-7803-6430-9

Type

conf

DOI

10.1109/SMELEC.2000.932440

Filename

932440