• DocumentCode
    3222736
  • Title

    Structural characteristics of thermally grown SiO2 prepared by a home made furnace

  • Author

    Mat, Ab Fatah Awang ; Musa, Hamdan ; Majlis, Burhanuddin Yeop

  • Author_Institution
    R&D Div., Telekom Malaysia Bhd., Malaysia
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    200
  • Lastpage
    202
  • Abstract
    The structural differences between thermally grown SiO2 prepared using three different gas mixtures was studied using infrared measurements, refractive index measurements and selective etching techniques. The data shows that the highest degree of porosity is found in materials grown in an ammonia atmosphere
  • Keywords
    MIS structures; dielectric thin films; etching; gas mixtures; integrated circuit testing; oxidation; porosity; refractive index; silicon compounds; NH3; SiO2; ammonia atmosphere; furnace; gas mixtures; infrared measurements; porosity; refractive index measurements; selective etching techniques; structural characteristics; structural differences; thermally grown SiO2; Atmosphere; Etching; Furnaces; Microelectronics; Nitrogen; Optical films; Oxidation; Refractive index; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on
  • Conference_Location
    Guoman Port Dickson Resort
  • Print_ISBN
    0-7803-6430-9
  • Type

    conf

  • DOI
    10.1109/SMELEC.2000.932463
  • Filename
    932463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3222736