Title :
Structural characteristics of thermally grown SiO2 prepared by a home made furnace
Author :
Mat, Ab Fatah Awang ; Musa, Hamdan ; Majlis, Burhanuddin Yeop
Author_Institution :
R&D Div., Telekom Malaysia Bhd., Malaysia
Abstract :
The structural differences between thermally grown SiO2 prepared using three different gas mixtures was studied using infrared measurements, refractive index measurements and selective etching techniques. The data shows that the highest degree of porosity is found in materials grown in an ammonia atmosphere
Keywords :
MIS structures; dielectric thin films; etching; gas mixtures; integrated circuit testing; oxidation; porosity; refractive index; silicon compounds; NH3; SiO2; ammonia atmosphere; furnace; gas mixtures; infrared measurements; porosity; refractive index measurements; selective etching techniques; structural characteristics; structural differences; thermally grown SiO2; Atmosphere; Etching; Furnaces; Microelectronics; Nitrogen; Optical films; Oxidation; Refractive index; Silicon; Substrates;
Conference_Titel :
Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on
Conference_Location :
Guoman Port Dickson Resort
Print_ISBN :
0-7803-6430-9
DOI :
10.1109/SMELEC.2000.932463
