Dielectric loaded Gaussian beam oscillator in the 40 GHz band

Author

Kiyokawa, M. ; Matsui, Takashi ; Hirose, Naoki

Author_Institution

Commun. Res. Lab., Minist. of Posts & Telecommun., Tokyo, Japan

fYear

1995

fDate

16-20 May 1995

Firstpage

75

Abstract

A 40-GHz Gaussian output-beam oscillator, using a Gaussian-beam open resonator filled with a dielectric, is described. The dielectric resonator has a highly reflective convex spherical surface and a plane mirror surface having a coupling section with an active circuit. The circuit is fabricated using a commercial HEMT chip. The phase noise of -90 dBc/Hz at 100 kHz off carrier is expected. The output power is extracted as a Gaussian beam.<>

Keywords

HEMT integrated circuits; dielectric resonator oscillators; dielectric-loaded waveguides; field effect MMIC; integrated circuit noise; millimetre wave oscillators; phase noise; 40 GHz; Gaussian-beam open resonator; HEMT chip; active circuit; convex spherical surface; coupling section; dielectric loaded Gaussian beam oscillator; output power; phase noise; plane mirror surface; Active circuits; Coupling circuits; Dielectric substrates; Millimeter wave circuits; Millimeter wave communication; Millimeter wave technology; Mirrors; Oscillators; Phase noise; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406094

Filename

406094