• DocumentCode
    3224248
  • Title

    An oxide/silicon core/shell nanowire FET

  • Author

    Zhang, Lining ; He, Jin ; Ma, Chenyue ; Zhou, Xingye ; Bian, Wei ; Li, Lin ; Chan, Mansun

  • Author_Institution
    Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
  • fYear
    2011
  • fDate
    15-18 Aug. 2011
  • Firstpage
    130
  • Lastpage
    133
  • Abstract
    An oxide/silicon core/shell nanowire (OSCSNW) MOSFET is proposed. Its fabrication process and performance are described in detail. The ION/IOFF ratio of the OSCSNW is improved by more than one order of magnitude compared with traditional nanowire (TNW) devices. Excellent scaling characteristics are also observed from the OSCSNW MOSFETs with minimal threshold voltage roll-off, drain induced barrier lowing and subthreshold slope degradation. Furthermore, the high frequency characteristics of OSCSNWs are also investigated.
  • Keywords
    MOSFET; nanowires; OSCSNW MOSFET; drain induced barrier lowing; minimal threshold voltage roll-off; oxide/silicon core/shell nanowire FET; scaling characteristics; subthreshold slope degradation; Charge carrier density; Leakage current; Logic gates; MOSFET circuits; Nanoscale devices; Scalability; Silicon; MOSFET; Nanowire; core/shell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
  • Conference_Location
    Portland, OR
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4577-1514-3
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • DOI
    10.1109/NANO.2011.6144306
  • Filename
    6144306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3224248