Title :
Effect of material composition, device length and applied voltage on resonant tunneling in an asymmetrical double-barrier hetero-structure
Author :
Jahangir, Ifat ; Jahangir, Shafat ; Khosru, Q.D.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
Transmission coefficient of electrons in an asymmetrical double-barrier hetero-structure has been calculated for different barrier widths, well widths, barrier-material compositions and applied voltages. These calculations are done using transmission line analogy of resonance tunneling phenomena and the results are used to show the effects of these variable parameters on transmission coefficient in terms of change in resonance energies.
Keywords :
resonant tunnelling; transmission line theory; transmission lines; applied voltage; asymmetrical double-barrier hetero-structure; material composition; resonance energy; resonance tunneling; resonant tunneling; transmission coefficient; transmission line analogy; Composite materials; Effective mass; Electrons; Gallium arsenide; Potential energy; Resonance; Resonant tunneling devices; Transmission line matrix methods; Transmission lines; Voltage; Hetero-structure; asymmetrical double-barrier hetero-structure; resonant tunneling; transmission coefficient;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394212
