• DocumentCode
    3224734
  • Title

    Co-extraction method for DC model parameters of BJT based on global optimization and physical analysis

  • Author

    Sun, Jiwei ; Jia, Xinzhang ; Li, Zhiyun ; You, Hailong

  • Author_Institution
    Sch. of Microelectron., Xidian Univ., Xi´´an, China
  • fYear
    2009
  • fDate
    25-27 Dec. 2009
  • Firstpage
    433
  • Lastpage
    436
  • Abstract
    Based on the SPICE BJT models, a new co-extraction method for DC model parameters of BJT is proposed. From measured terminal characteristics data of BJT, the Model Editor, a model parameters extraction tool provided by PSpice, uses group extraction method to obtain DC model parameter values. But, actual situations show that there is a large error between the output characteristics determined by the model parameters extracted by Model Editor and the measured output characteristics. In order to obtain the most optimal values, it is necessary to use Optimizer tool to furthermore globally optimize for all the DC model parameters from parts of results of Model editor. And because the selection of initial values is important to optimization results, based on the physical processes of BJT, most DC model parameters close to the most optimal values are calculated as the initial values of optimization. Thus, the new co-extraction method improves extraction accuracy and efficiency without introducing complex mathematic optimization arithmetic.
  • Keywords
    SPICE; bipolar transistors; optimisation; BJT models; DC model parameters; SPICE; coextraction method; complex mathematic optimization arithmetic; global optimization; model editor; physical analysis; Data mining; Integrated circuit modeling; Mathematical model; Mathematics; Microelectronics; Optimization methods; Parameter extraction; Region 3; SPICE; Sun; BJT; Model Editor; Optimizer tool; extraction; initial values; model parameter; optimization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4244-4297-3
  • Electronic_ISBN
    978-1-4244-4298-0
  • Type

    conf

  • DOI
    10.1109/EDSSC.2009.5394225
  • Filename
    5394225