• DocumentCode
    3225069
  • Title

    Study on Hole Effective Mass of Strained Si1-xGex/(101)Si

  • Author

    Song, Jianjun ; Zhang, Heming ; Hu, Huiyong ; Xuan, RongXi ; Dai, Xianying

  • Author_Institution
    Sch. of Microelectron., Xidian Univ., Xi´´an, China
  • fYear
    2009
  • fDate
    25-27 Dec. 2009
  • Firstpage
    362
  • Lastpage
    364
  • Abstract
    Using K.P method with the help of perturbation theory, the arbitrary k wave vector directional hole effective masses in strained Si1-xGex/(101)Si were obtained. It is found that the more obvious anisotropy of the hole effective mass occurs in strained Si1-xGex on (101) Si substrate and that the [010] directional hole effective mass decreases obviously under strain, compared with the one in relaxed Si. The results above can supply valuable references to the design of the Si-based strained PMOS devices.
  • Keywords
    Ge-Si alloys; MOSFET; effective mass; k.p calculations; perturbation theory; PMOS devices; SiGe; arbitrary k wave vector; directional hole effective mass; k.p method; perturbation theory; Abstracts; Anisotropic magnetoresistance; Capacitive sensors; Dispersion; Effective mass; Fabrication; High speed integrated circuits; MOS devices; Occupational stress; Physics; PMOS; hole effective mass; strained Si1−xGex;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4244-4297-3
  • Electronic_ISBN
    978-1-4244-4298-0
  • Type

    conf

  • DOI
    10.1109/EDSSC.2009.5394242
  • Filename
    5394242
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3225069