The preparation and optoelectronic characteristics of the p-n Si/SiC heterojunction

Author

Zang, Yuan ; Chen, Zhiming ; Li, Lianbi ; Zhao, Shunfeng

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

306

Lastpage

309

Abstract

The p-n Si/SiC heterojunctions are prepared successfully in LPCVD (low-pressure chemical vapor deposition). The sheet resistance of the Si epilayers can be adjusted from 60000 Â¿/Â¿ to 300 Â¿/Â¿ by changing the ratio of diborane and silane in the mixed gas. Optoelectric response test results of the heterojunction samples indicate that high doping concentration of the Si epilayer induces smaller photocurrent. The photocurrent density is 20 mA/cm² when the sheet resistance of the Si layer is 20000 Â¿/Â¿. As the sheet resistance of the Si epilayer decreases to 2600 Â¿/Â¿, the photocurrent density accordingly reduces to 2 mA/cm².

Keywords

CVD coatings; chemical vapour deposition; contact resistance; current density; doping profiles; electro-optical effects; elemental semiconductors; p-n heterojunctions; photoconductivity; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; silicon compounds; wide band gap semiconductors; LPCVD; Si-SiC; diborane-silane mixed gas ratio; doping concentration; epilayers; low-pressure chemical vapor deposition; optoelectric response test; optoelectronic properties; p-n heterojunctions; photocurrent density; sheet resistance; Chemical vapor deposition; Current density; Doping; Electrodes; Heterojunctions; Infrared detectors; Silicon carbide; Substrates; Testing; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394254

Filename

5394254