The simulation study of 6H-SiC photoconductive semiconductor switch

Author

Na, Ni ; Hui, M. Guo ; Zhang, M. Yuming ; Zhang, Yimen

Author_Institution

Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

330

Lastpage

333

Abstract

This paper has investigated vanadium compensated 6H-SiC PSCC horizontal structure through preliminary transient simulation of switching traps in different concentrations, optical pulse in different wavelengths, wave power and pulse width, and different bias voltage characteristics of the work with minimum off-state leakage current and minimum pulse rise time.

Keywords

leakage currents; optical pulse generation; photoconducting switches; silicon compounds; vanadium; 6H-SiC photoconductive semiconductor switch; SiC; bias voltage characteristics; minimum pulse rise time; off-state leakage current; optical pulse; preliminary transient simulation; pulse width; switching traps; vanadium compensated 6H-SiC PSCC horizontal structure; wave power; Conductivity; Leakage current; Optical pulses; Optical switches; Photoconducting devices; Photoconducting materials; Power semiconductor switches; Semiconductor materials; Space vector pulse width modulation; Voltage; 6H-SiC; ISE; photoconductive semiconductor switches (PCSS); pulse power;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394260

Filename

5394260