Thermal design and structure of thick film hybrid IC based on insulated aluminium substrate

Author

Sakamoto, Noriaki ; Kanai, Tetsuo ; Ohkawa, Katsumi

Author_Institution

Sanyo Electric Co Ltd., Osaka, Japan

fYear

1993

fDate

2-4 Feb 1993

Firstpage

186

Lastpage

193

Abstract

The structural characteristics of an insulated metal substrate based on aluminum (IMST) and a circuit assembly innovation by IMST (CAIT) mounting technology are discussed. It is shown that IMST has an excellent heat dissipation property, which provides the active and passive elements mounted on this substrate with a very low thermal resistance from them to the substrate. The hybrid IC based on this substrate enables the high density packaging of circuits including power semiconductors. The relationship between the structure and thermal resistance for each circuit component mounted on the IMST substrate is described

Keywords

cooling; hybrid integrated circuits; packaging; thick film circuits; Al; IMST; active elements; circuit assembly; heat dissipation property; high density packaging; insulated metal substrate; passive elements; power semiconductors; structural characteristics; thermal resistance; thick film hybrid; Aluminum; Assembly; Hybrid integrated circuits; Insulation; Integrated circuit packaging; Resistance heating; Substrates; Technological innovation; Thermal resistance; Thick films;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal Measurement and Management Symposium, 1993. SEMI-THERM IX., Ninth Annual IEEE

Conference_Location

Austin, TX

Print_ISBN

0-7803-0863-8

Type

conf

DOI

10.1109/STHERM.1993.225315

Filename

225315