Correlation of experimental data with analytical predictions for GaAs FET in MMIC transmitter module in a subarray

Author

Ibrahim, M.S. ; Paradis, L.R.

Author_Institution

Raytheon Co., Tewksbury, MA, USA

fYear

1993

fDate

2-4 Feb 1993

Firstpage

160

Lastpage

165

Abstract

Under the microwave/millimeter-wave monolithic integrated circuit (MIMIC) Phase 1 DARPA sponsored development program, a comprehensive integrated finite element model of a transmitter module which is based on MMIC technology was developed and exercised. This model determined FET channel temperature sensitivity to system and/or chip level design variations. Module thermal measurements were taken during operation of a brassboard assembly, and the results were compared with the predictions. These showed excellent agreement, validating the model and the approach. The authors describe the tests and compare the experimental and analytical results

Keywords

III-V semiconductors; MMIC; field effect transistors; finite element analysis; gallium arsenide; semiconductor device models; FET; FET channel temperature; GaAs; MIMIC; MMIC transmitter module; brassboard assembly; chip level design variations; integrated finite element model; thermal measurements; Data analysis; Finite element methods; Integrated circuit modeling; Integrated circuit technology; MIMICs; MMICs; Microwave FETs; Microwave technology; Temperature sensors; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal Measurement and Management Symposium, 1993. SEMI-THERM IX., Ninth Annual IEEE

Conference_Location

Austin, TX

Print_ISBN

0-7803-0863-8

Type

conf

DOI

10.1109/STHERM.1993.225318

Filename

225318