Structure and electrical properties of Ho-modified Sr2Bi4Ti5O18 Lead-free piezoelectric ceramics

Author

Chen, Mingli ; Xu, Zhijun ; Chu, Ruiqing ; Liu, Yang ; Mingli Chen ; Shao, Lin ; Li, Guorong

Author_Institution

Coll. of Mater. Sci. & Eng., Liaocheng Univ., Liaocheng, China

fYear

2011

fDate

24-27 July 2011

Firstpage

1

Lastpage

4

Abstract

Bismuth layer-structured Sr₂Bi_4-xHo_xTi₅O₁₈ (x = 0.0, 0.1, 0.2, 0.3) ceramics were prepared by solid state reaction. X-ray diffraction pattern showed that pure bismuth-layered structure of SBTi was not affected by Ho-doping. SEM images showed that dense microstructures with uniform gain size were obtained in all samples. Dielectric, ferroelectric and piezoelectric properties of Sr₂Bi_4-xHo_xTi₅O₁₈ ceramics were also investigated. Results showed that Ho-doping caused the Curie temperature of SBTi ceramics to shift to lower temperature and decreased the dielectric loss. In addition, the remnant polarization and the piezoelectric constant decreased with the increasing of Ho-doping content.

Keywords

X-ray diffraction; bismuth compounds; densification; dielectric hysteresis; dielectric losses; dielectric polarisation; ferroelectric Curie temperature; ferroelectric ceramics; grain growth; holmium compounds; materials preparation; permittivity; piezoceramics; remanence; scanning electron microscopy; strontium compounds; Curie temperature; SEM; Sr₂Bi_4-xHo_xTi₅O₁₈; X-ray diffraction; bismuth layer structured; ceramics; dense microstructure; dielectric loss; dielectric properties; electrical properties; ferroelectric hysteresis loops; ferroelectric properties; grain growth; holmium doping; piezoelectric constant; piezoelectric properties; remnant polarization; scanning electron microscopy; solid state reaction; structural properties; Dielectrics; Educational institutions; Electrodes; Lead; Piezoelectric polarization; X-ray imaging; X-ray scattering; Dielectric properties; Ferroelectric properties; Piezoelectric properties; SBTi-Hox;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics (ISAF/PFM), 2011 International Symposium on and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials

Conference_Location

Vancouver, BC

Print_ISBN

978-1-4577-1162-6

Electronic_ISBN

978-1-4577-1161-9

Type

conf

DOI

10.1109/ISAF.2011.6014004

Filename

6014004