Title :
Real-time quantum simulation of Terahertz response in single wall carbon nanotube
Author :
Chen, Zuojing ; Yngvesson, Sigfrid ; Polizzi, Eric
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts - Amherst, Amherst, MA, USA
Abstract :
Carbon nanotubes are a promising candidate for the next generation transistors because of their unique electrical properties. Especially, single wall carbon nanotubes are prototypical low-dimensional nanomaterials because of their specific one dimensional band structure and long carrier mean free path. In this paper, we propose efficient modeling methods and novel quantum propagation schemes to simulate THz response of single wall carbon nanotubes. Simulation are carried out in real-time directly by computing the integral solution of the time-ordered evolution operator. Electron resonance phenomena are observed in a sub-picosecond-scale time domain. Ballistic electron resonance that corresponds to the round-trip transit of an electron along the nanotube is found. Kinetic inductance is also obtained in the simulation. Our simulation results are supported by other theoretical estimates and recent experimental measurements.
Keywords :
ballistic transport; band structure; carbon nanotubes; carrier mean free path; inductance; 1D band structure; C; ballistic electron resonance; carrier mean free path; efficient modeling methods; electrical properties; electron resonance phenomena; integral solution; kinetic inductance; low-dimensional nanomaterials; quantum propagation schemes; real-time quantum simulation; round-trip electron transit; single wall carbon nanotube; subpicosecond-scale time domain; terahertz response; time-ordered evolution operator; transistors; Algebra; Radio frequency; Time domain analysis;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2011.6144438