DocumentCode
3227022
Title
Effect of annealing on ZnO nanowires grown at low temperature
Author
Nadarajah, Athavan ; Rouvimov, Sergei ; Könenkamp, Rolf
Author_Institution
Dept. of Phys., Portland State Univ., Portland, OR, USA
fYear
2011
fDate
15-18 Aug. 2011
Firstpage
1006
Lastpage
1010
Abstract
Our research demonstrates that thermal and pulsed laser annealing improve the structural and optical properties of ZnO nanowire films grown electrochemically from aqueous electrolytes at a temperature below 90°C. The structural and optical properties of the grown ZnO nanowires were characterized by transmission electron microscopy and by their photo- and electroluminescence. Our results indicate that the as-grown nanowire structures have considerable internal lattice strain. However, moderate thermal annealing and laser annealing induce strain relaxation, considerably improving optical and electrical properties, and thereby allowing the fabrication of devices, such as solar cells and light emitting diodes.
Keywords
II-VI semiconductors; electroluminescence; internal stresses; laser beam annealing; nanofabrication; nanowires; photoluminescence; semiconductor growth; transmission electron microscopy; wide band gap semiconductors; zinc compounds; ZnO; ZnO nanowire films; aqueous electrolytes; device fabrication; electrical properties; electroluminescence; internal lattice strain; light emitting diodes; moderate thermal annealing; nanowire structures; optical properties; photoluminescence; pulsed laser annealing; solar cells; strain relaxation; structural properties; transmission electron microscopy; Annealing; Lasers; Nanowires; Optical films; Photoluminescence; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location
Portland, OR
ISSN
1944-9399
Print_ISBN
978-1-4577-1514-3
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2011.6144444
Filename
6144444
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