DocumentCode
3227697
Title
Highly sensitive, silicon-on-insulator nanowire based photodetector: Device optimization and analysis
Author
Roudsari, A. Fadavi ; Li, G. ; Saini, S.S. ; O, N. ; Anantram, M.P.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
fYear
2011
fDate
15-18 Aug. 2011
Firstpage
873
Lastpage
876
Abstract
We recently introduced a new phototransistor with multiple gates and a modified channel that offers a large optical gain [1]. In this work, after reviewing the proposed phototransistor, we present new results for the variation of the photo-responsivity with device dimensions.
Keywords
nanowires; photodetectors; phototransistors; silicon-on-insulator; device analysis; device optimization; photodetector; phototransistor; silicon-on-insulator nanowire; Dark current; Lighting; Logic gates; Nanoscale devices; Performance evaluation; Photoconductivity; Photodetectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location
Portland, OR
ISSN
1944-9399
Print_ISBN
978-1-4577-1514-3
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2011.6144475
Filename
6144475
Link To Document