DocumentCode
3228048
Title
Selective area OMCVD and its applications
Author
Bhat, R.
Author_Institution
Bellcore, Red Bank, NJ, USA
Volume
2
fYear
1995
fDate
30 Oct-2 Nov 1995
Abstract
Summary form only given. In this talk, we will review the progress in selective area epitaxy using organometallic chemical vapor deposition (OMCVD) on substrates with patterned masks. Selective area epitaxy enables one to obtain lateral control of thickness, composition and doping
Keywords
chemical vapour deposition; epitaxial growth; masks; optical fabrication; semiconductor doping; semiconductor growth; OMCVD; lateral thickness control; organometallic chemical vapor deposition; patterned masks; review; selective area OMCVD; selective area epitaxy; semiconductor composition; semiconductor doping; substrates; Chemical vapor deposition; Doping; Epitaxial growth; Gallium arsenide; Indium phosphide; Optical device fabrication; Quantum dot lasers; Substrates; Thickness control; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484615
Filename
484615
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