• DocumentCode
    3228083
  • Title

    MgO/SiO2 dielectric multilayer reflectors for GaN-based ultra-violet surface emitting lasers

  • Author

    Sakaguchi, T. ; Katsube, A. ; Honda, T. ; Koyama, F. ; Iga, K.

  • Author_Institution
    Precision & Intell. Lab., Tokyo Inst. of Technol., Japan
  • Volume
    2
  • fYear
    1995
  • fDate
    30 Oct-2 Nov 1995
  • Firstpage
    102
  • Abstract
    We have fabricated a 20 pair MgO-SiO2 dielectric multilayer reflector by an electron-beam evaporation system on Si substrates. This system can introduce the oxygen gas during the deposition to avoid the lack of oxygen, and each layer can be alternatively evaporated while monitoring the thickness with a crystal sensor
  • Keywords
    epitaxial growth; magnesium compounds; monitoring; optical fabrication; optical films; optical testing; reflectivity; semiconductor growth; semiconductor lasers; silicon compounds; surface emitting lasers; thickness measurement; vapour deposition; GaN; GaN-based ultra-violet surface emitting lasers; MgO-SiO2; MgO/SiO2 dielectric multilayer reflectors; Si; Si substrates; crystal sensor; deposition; electron-beam evaporation system; oxygen gas; thickness measurement; thickness monitoring; Dielectrics; Gallium nitride; Mirrors; Nonhomogeneous media; Optical surface waves; Reflectivity; Refractive index; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-2450-1
  • Type

    conf

  • DOI
    10.1109/LEOS.1995.484617
  • Filename
    484617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3228083