DocumentCode :
3228120
Title :
Isotropic and anisotropic scaling analysis of nanowire phase change memory
Author :
Liu, Jie ; Yu, Bin ; Anantram, M.P.
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
fYear :
2011
fDate :
15-18 Aug. 2011
Firstpage :
1343
Lastpage :
1347
Abstract :
We recently investigated the isotropic scaling properties of nanowire (NW) phase change memory (PCM) [1]. In this paper, we extend our analysis also to anisotropic scaling. By combining electrothermal theory, thermodynamic physics, and numerical simulation, the analysis explains the superiority of NW PCM over conventional thin film PCM, and reveals the different scaling properties of the three widely used operation schemes (constant electric field, constant voltage, and constant current) of NW PCM. It is demonstrated that if the device is isotropically downscaled by a factor of 1/k (k >;1), the device operation energy (current) will be decreased by k3 (k) times, and the device operation speed will be increased by k2 times. The impacts of NW radius and length on PCM device performance are analyzed. Based on the analysis results, the suggestions to optimize the NW PCM device design are given.
Keywords :
nanowires; phase change memories; NW PCM; anisotropic scaling analysis; constant current; constant electric field; constant voltage; electrothermal theory; nanowire phase change memory; numerical simulation; thermodynamic physics; thin film PCM; Current density; Nanoscale devices; Phase change materials; Phase change memory; Sun; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
ISSN :
1944-9399
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
Type :
conf
DOI :
10.1109/NANO.2011.6144493
Filename :
6144493
Link To Document :
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