DocumentCode
3228306
Title
Diode laser material evaluation using liquid contact luminescence
Author
Zory, P.S. ; Young, C.L. ; Hsu, C.F. ; O, J.S. ; Largent, C.C.
Author_Institution
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Volume
2
fYear
1995
fDate
30 Oct-2 Nov 1995
Firstpage
133
Abstract
A non-destructive, liquid contact luminescence (LCL) technique is described. LCL spectral data obtained by current injection through single quantum well GaAs (infrared) and CdZnSe (blue-green) diode laser material are compared
Keywords
II-VI semiconductors; III-V semiconductors; cadmium compounds; electroluminescence; gallium arsenide; optical materials; quantum well lasers; spontaneous emission; zinc compounds; CdZnSe; GaAs; blue-green diode laser material; current injection; diode laser material; infrared diode laser material; liquid contact luminescence; nondestructive method; single quantum well diode laser material; Contacts; Diode lasers; Gallium arsenide; Luminescence; Optical materials; Oxidation; Semiconductor lasers; Semiconductor materials; Spontaneous emission; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484632
Filename
484632
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