DocumentCode :
3228385
Title :
A low voltage current mirror based on quasi-floating gate MOSFETs
Author :
Gupta, Rockey ; Sharma, Susheel ; Jamuar, S.S.
Author_Institution :
Dept. of Phys. & Electron., Univ. of Jammu, Jammu, India
fYear :
2010
fDate :
6-9 Dec. 2010
Firstpage :
580
Lastpage :
583
Abstract :
A low voltage current mirror based on quasi-floating gate MOSFET (QFGMOS) is presented. The use of QFGMOS eliminates the limitations associated with floating-gate MOSFET (FGMOS) structures like increased silicon area, initial charge trapped in the floating gates and gain-bandwidth product degradation. The proposed current mirror based on QFGMOS has a current range up to 500 μA with offset of 10 pA, exhibits high bandwidth of 640 MHz, input resistance of 480 Ω, output resistance of 1.67 GΩ, unity current transfer ratio and dissipates 1.5 mW power. A resistive compensation has also been employed to increase the bandwidth up to 1.3 GHz.
Keywords :
MOSFET; current mirrors; low-power electronics; gain-bandwidth product degradation; input resistance; low-voltage current mirror; output resistance; quasifloating gate MOSFET; resistive compensation; unity current transfer ratio; Bandwidth; Logic gates; Low voltage; MOSFETs; Mirrors; Resistors; Current mirror; Quasi-floating gate MOSFET;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-7454-7
Type :
conf
DOI :
10.1109/APCCAS.2010.5774857
Filename :
5774857
Link To Document :
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