Fabrication of (K,Na)NbO3 thin films on Si substrate by pulsed laser deposition

Author

Fukada, Masaki ; Yamazoe, Seiji ; Wada, Takahiro

Author_Institution

Dept. of Mater. Chem., Ryukoku Univ., Otsu, Japan

fYear

2011

fDate

24-27 July 2011

Firstpage

1

Lastpage

4

Abstract

We fabricated (Na,K)NbO₃ (NKN) thin films on (111)Pt/Ti/SiO₂/(001)Si substrates at substrate temperature of 750°C in O₂ gas pressure of 200 mTorr by pulsed laser deposition (PLD). The ferroelectric properties of the NKN thin films were improved by the insertion of a thin NKN or NN buffer layer. These buffer layers had an influence on composition control of the NKN films. The remanent polarization and the coercive electric field of the NKN films with the NN buffer layer were 15 μC/cm² and 40 kV/cm, respectively.

Keywords

buffer layers; dielectric polarisation; ferroelectric coercive field; ferroelectric thin films; potassium compounds; pulsed laser deposition; sodium compounds; (KNa)NbO₃; Si; buffer layer; coercive electric field; ferroelectric properties; pressure 200 mtorr; pulsed laser deposition; remanent polarization; temperature 750 degC; thin films; Buffer layers; Ceramics; Lead; Pulsed laser deposition; Substrates; Surface treatment; (Na,K)NbO3; buffer layer; ferroelectric; lead-free; pulsed laser deposition; thin film;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics (ISAF/PFM), 2011 International Symposium on and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials

Conference_Location

Vancouver, BC

Print_ISBN

978-1-4577-1162-6

Electronic_ISBN

978-1-4577-1161-9

Type

conf

DOI

10.1109/ISAF.2011.6014121

Filename

6014121