Design and preliminary operation of a gigahertz repetition rate femtosecond hybrid AlGaAs/Ti:sapphire laser system for advanced photoinjectors

Author

Fochs, S.N. ; Le Sage, G.P. ; Feng, H.X.C. ; Laurent, L. ; Rosenau, S.A. ; Hartemann, F.V. ; Luhmann, N.C., Jr. ; Perry, M.D. ; Heritage, J.P.

Author_Institution

Dept. of Appl. Sci., California Univ., Davis, CA, USA

Volume

2

fYear

1995

fDate

30 Oct-2 Nov 1995

Firstpage

212

Abstract

The design and preliminary operation of a novel AlGaAs/Ti:sapphire (LiSAF) master oscillator/power amplifier laser system, capable of operating in burst mode (>100 pulses) at 2.142 GHz with an extremely low jitter (<400 fs), and producing frequency-quadrupled pulses with an energy >10 μJ at 208 nm and duration <500 fs to irradiate cesium telluride photocathodes are described

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; jitter; laser modes; optical design techniques; photocathodes; sapphire; semiconductor lasers; solid lasers; titanium; 10 muJ; 208 nm; 400 fs; 500 fs; AlGaAs; CdTe; advanced photoinjectors; burst mode; cesium telluride photocathodes; femtosecond hybrid AlGaAs/Ti:sapphire laser system; frequency-quadrupled pulses; gigahertz repetition rate; low jitter; master oscillator/power amplifier laser system; semiconductor lasers; Cathodes; Frequency; Jitter; Laser modes; Operational amplifiers; Optical design; Optical pulses; Oscillators; Power lasers; Pulse amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484670

Filename

484670