Title :
Syntheses of (Pb-Sn-Ti)O3 thin films by PLD method and their structural and ferroelectric properties
Author :
Iwasaki, J. ; Uesu, Y. ; Yokota, H. ; Janolin, P.-E. ; Kiat, J.M. ; Haumant, R.
Author_Institution :
Dept. of Phys., Waseda Univ., Tokyo, Japan
Abstract :
(Pb-Sn-Ti)O3 (PST) thin films are fabricated by the pulse laser deposition method with three ceramic targets of PbO, SnO and TiO2 with consecutive sequences of deposition. Lattice parameters of PST thin film are a=b=0.3993 nm, c=0.4048 nm. This fact together with TEM-EDX results suggests that PST films are the mixed state of PbTiO3-SnTiO3-PbSnO3. Real part of dielectric constant and remanent polarization are determined to be about 1000 and 35 μC/cm2 at room temperature, respectively. X-ray diffraction reveals that a structural phase transition takes place at 600 °C. Piezoelectric response is confirmed by a piezo-force scanning microscope.
Keywords :
X-ray chemical analysis; X-ray diffraction; dielectric polarisation; ferroelectric transitions; lattice constants; lead compounds; mixing; permittivity; piezoceramics; piezoelectric thin films; piezoelectricity; pulsed laser deposition; tin compounds; transmission electron microscopy; PbTiO3-SnTiO3-PbSnO3; TEM-EDX; X-ray chemical analysis; X-ray diffraction; ceramic; dielectric constant; ferroelectric properties; lattice parameters; mixed state; piezoelectricity; piezoforce scanning microscopy; pulsed laser deposition; remanent polarization; structural phase transition; structural properties; temperature 293 K to 298 K; temperature 600 degC; thin films; transmission electron microscopy; Films; Lattices; Substrates; Temperature; Temperature measurement; Tin; X-ray scattering; (Pb,Sn,Ti)O3 thin film; Ferroelectricity; PLD method; Piezoelectricity;
Conference_Titel :
Applications of Ferroelectrics (ISAF/PFM), 2011 International Symposium on and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4577-1162-6
Electronic_ISBN :
978-1-4577-1161-9
DOI :
10.1109/ISAF.2011.6014149
