SOI material technology using plasma immersion ion implantation

Author

Lu, X. ; Iyer, S.S.K. ; Min, J. ; Fan, Z. ; Liu, J.B. ; Chu, P.K. ; Hu, C. ; Chueng, N.W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

48

Lastpage

49

Abstract

Silicon on insulator (SOI) devices have many attractive applications in integrated circuit technology. The high cost of manufacturing the SOI wafers, however, prevents it from being widely accepted for mass production. Separation by plasma implantation of oxygen (SPIMOX), an extremely high through-put SIMOX formation process using plasma immersion ion implantation (PIII) has demonstrated promising results. In this paper, an improvement on the SPIMOX process is presented. High-dose implantation is a costly procedure for the “smart cut” process. A low cost, high through-put implantation by hydrogen or helium plasma is demonstrated as a feasible, novel process for SOI technology using PIII

Keywords

SIMOX; integrated circuit manufacture; integrated circuit technology; ion implantation; plasma applications; H; H plasma; He; He plasma; SOI material technology; SPIMOX process; Si; high through-put SIMOX formation process; integrated circuit technology; low cost high throughput implantation; plasma immersion ion implantation; smart cut process; Costs; Integrated circuit technology; Manufacturing; Mass production; Materials science and technology; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552487

Filename

552487