DocumentCode
3230002
Title
All-optical bistable device in multiquantum wells p-i-n diode structure
Author
Kwon, O.K. ; Kim, K. ; Choi, Y.W. ; Lee, E.H.
Author_Institution
Res. Dept., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Volume
2
fYear
1995
fDate
30 Oct-2 Nov 1995
Firstpage
301
Abstract
In conclusion, we propose improved all-optical bistable asymmetric extremely shallow (AE-SEED) structure in very simple lay-out that has not only low minimum switching energy but also sizable ΔR and CR comparable to those of the externally biased 60 QW pairs E-SEED
Keywords
SEEDs; electro-optical switches; p-i-n photodiodes; semiconductor quantum wells; AE-SEED structure; all-optical bistable asymmetric extremely shallow structure; all-optical bistable device; low minimum switching energy; multiquantum well p-i-n diode structure; Chromium; Gallium arsenide; Optical bistability; Optical devices; Optical signal processing; P-i-n diodes; Page description languages; Stimulated emission; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484726
Filename
484726
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