Characterization of low dose SIMOX for low power electronics

Author

Anc, M.J. ; Allen, L.P. ; Dolan, R.P. ; Cordts, B.F. ; Ryding, G. ; Mendicino, M.A. ; Shi, Xiaoyu ; Maszara, W. ; Dockerty, R. ; Vasudev, P.K. ; Roitman, P.

Author_Institution

Ibis Technol. Corp., Danvers, MA, USA

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

54

Lastpage

55

Abstract

Summary form only given. In this work we focus on the characterization of the low dose SIMOX from the designed experiment. In this experiment the ⟨100⟩ oriented, p-type silicon wafers were implanted with the range of doses from 0.3E18 cm² to 0.6E18 cm² at the energy 190 keV, 200 keV and 210 keV and annealed for 6 hours at 1350°C in 1%O₂ in N₂. Nondestructive characterization was performed using spectroscopic ellipsometry, optical reflectometry and TXRF. The structure of thin film layers was analyzed with high resolution SEM, dislocation density was determined by the enhanced Secco etch, and buried oxide integrity was examined by the measurements of I/V and C/V characteristics with the mercury probe analyzer

Keywords

SIMOX; ellipsometry; integrated circuit measurement; ion implantation; reflectometry; scanning electron microscopy; ⟨100⟩ oriented Si; 1350 C; 190 to 210 keV; 6 hour; C/V characteristics; I/V characteristics; N₂; O₂; O₂-N₂; Si; TXRF; buried oxide integrity; dislocation density; enhanced Secco etch; high resolution SEM; low dose SIMOX; low power electronics; mercury probe analyzer; nondestructive characterization; optical reflectometry; p-type Si wafers; spectroscopic ellipsometry; thin film layers; Annealing; Density measurement; Ellipsometry; Etching; Low power electronics; Optical films; Reflectometry; Silicon; Spectroscopy; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552490

Filename

552490