A new approach to a GaAs/AlGaAs optical neurochip with three layered structure

Author

Ohta, J. ; Takahashi, M. ; Nitta, Y. ; Tai, S. ; Mitsunaga, K. ; Kyuma, K.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1989

fDate

0-0 1989

Firstpage

477

Abstract

A GaAs/AlGaAs optical synaptic interconnection device for neural networks is reported. It consists of a light-emitting-diode array, an interconnection matrix, and a photodiode array, which are integrated in a hybrid-layered structure on a GaAs substrate. The device structure and characteristics are reported. The fabricated device can simulate a 32-neuron system. The experimental results for a Hopfield associative memory with three stored vectors are described.<>

Keywords

III-V semiconductors; aluminium compounds; content-addressable storage; gallium arsenide; integrated optoelectronics; light emitting diodes; neural nets; optical storage; photodiodes; 32-neuron system; GaAs-AlGaAs; Hopfield associative memory; hybrid-layered structure; interconnection matrix; light-emitting-diode array; neural networks; optical neurochip; photodiode array; stored vectors; synaptic interconnection device; three layered structure; Aluminum compounds; Associative memories; Gallium compounds; Integrated optoelectronics; Light-emitting diodes; Neural networks; Optical memories; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Neural Networks, 1989. IJCNN., International Joint Conference on

Conference_Location

Washington, DC, USA

Type

conf

DOI

10.1109/IJCNN.1989.118285

Filename

118285