Fully integrated nonlinear modeling and characterization system of microwave transistors with on-wafer pulsed measurements

Author

Teyssier, J.P. ; Viaud, J.P. ; Raoux, J.J. ; Quere, R.

Author_Institution

IRCOM, Limoges Univ., France

fYear

1995

fDate

16-20 May 1995

Firstpage

1033

Abstract

A novel approach for nonlinear characterization and modeling of microwave transistors has been developed. The whole process is organized as a set of methods contained in the transistor database. This implies that characterization and modeling are performed in an integrated manner. I(V) and S-parameters are measured on wafer under pulsed conditions, suitable for MESFETs, HEMTs or HBTs as illustrated by the proposed models.<>

Keywords

S-parameters; automatic test equipment; automatic testing; electronic engineering computing; microwave measurement; microwave transistors; semiconductor device models; semiconductor device testing; HBTs; HEMTs; I/V parameters; MESFETs; S-parameters; device characterization; integrated modeling/characterization system; microwave transistors; nonlinear modeling; onwafer pulsed measurements; transistor database; Circuit simulation; Databases; Equivalent circuits; Microwave transistors; Object oriented modeling; Power measurement; Pulse measurements; Radio frequency; Scattering parameters; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406148

Filename

406148