Micro-inhomogeneity effects and radiation damage in semi-insulating GaAs radiation detector

Author

Bates, R. ; Didziulis, R. ; Mazukauskas, V. ; Shea, V.O. ; Raine, C. ; Rinkevicius, V. ; Smith, K.M. ; Storasta, J. ; Vaitkus, J.

Author_Institution

Dept. of Phys. & Astron., Glasgow Univ., UK

fYear

1997

fDate

9-15 Nov 1997

Firstpage

51

Abstract

Thermally-stimulated current (TSC) measurements and a detailed analysis of current-voltage (I-V) characteristics have been made on semi-insulating GaAs (SI-GaAs) Schottky diode particle detectors, fabricated on substrates from several suppliers, before and after irradiation with 24 GeV protons and 300 MeV pions. The analysis of I-V characteristics allows the determination of the barrier height and bulk resistance in detectors. Changes observed in I-V characteristics and TSC spectra after irradiation are described and a dislocation-net model of radiation-damaged devices is proposed

Keywords

Schottky diodes; gallium arsenide; meson detection; meson effects; proton detection; proton effects; semiconductor counters; thermally stimulated currents; 24 GeV; 300 MeV; GaAs; I-V characteristics; Schottky diode particle detectors; barrier height; bulk resistance; current-voltage characteristics; dislocation-net model; microinhomogeneity effects; pions; protons; radiation damage; radiation detector; thermally-stimulated current; Current measurement; Gallium arsenide; Heating; Laser excitation; Physics; Protons; Radiation detectors; Schottky diodes; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1997. IEEE

Conference_Location

Albuquerque, NM

ISSN

1082-3654

Print_ISBN

0-7803-4258-5

Type

conf

DOI

10.1109/NSSMIC.1997.672504

Filename

672504