A novel high-frequency high-voltage LDMOS transistor using an extended gate RESURF technology

Author

Vestling, L. ; Edholm, B. ; Olsson, J. ; Tiensuu, S. ; Söderbärg, A.

Author_Institution

Angstrom Lab., Uppsala Univ., Sweden

fYear

1997

fDate

26-29 May 1997

Firstpage

45

Lastpage

48

Abstract

A novel high-voltage DMOS transistor with a low doped extended gate is presented. The device withstands 240 V in the off-state and has a specific on-resistance of 24 mΩcm². The transconductance is 60 mS/mm at 3 V gate voltage. The sub-micron channel length gives small-signal high-frequency performance as f_T=2.8 GHz and f_max=5.8 GHz and the unilateral power gain at 900 MHz is over 15 dB. The dependence of breakdown voltage and on-resistance on gate doping level and polysilicon gate length is investigated with device simulations. It is found that the breakdown voltage is highly dependent on the gate doping level

Keywords

UHF field effect transistors; characteristics measurement; power MOSFET; power field effect transistors; semiconductor device models; semiconductor doping; 15 dB; 2.8 GHz; 240 V; 3 V; 5.8 GHz; 60 mS/mm; 900 MHz; breakdown voltage; device simulations; extended gate RESURF technology; gate doping level; gate voltage; high-frequency high-voltage LDMOS transistor; high-voltage DMOS transistor; low doped extended gate; polysilicon gate length; small-signal high-frequency performance; specific on-resistance; sub-micron channel length; transconductance; unilateral power gain; CMOS logic circuits; Circuit simulation; Doping; Laboratories; Performance gain; Solid state circuits; Switching circuits; Transconductance; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601427

Filename

601427