Use of CdZnTe pixel arrays with multiplexer readout to map detector crystal properties

Author

Barber, H.B. ; Dereniak, E. ; Eskin, J.D. ; Hilton, N.R. ; Marks, D.G. ; Matherson, K.J. ; Woolfenden, J.M. ; Young, E.T.

Author_Institution

Opt. Sci. Center, Arizona Univ., Tucson, AZ, USA

fYear

1997

fDate

9-15 Nov 1997

Firstpage

286

Abstract

We demonstrate the use of pixel arrays to map CdZnTe detector materials properties in situ. Our readout technique uses a multiplexer containing a gated integrator and is sensitive to DC currents. We have made extensive measurements of leakage current in one Cd_0.9Zn _0.1Te hybrid detector array that has size 25×25×1.5 mm³ and 380 μm pixel pitch. The pixel I-V curves are essentially ohmic and the leakage pattern is qualitatively similar at different temperatures. Histograms of pixel resistivity are relatively flat in the range 5-60 GΩ cm. Pixel Arrhenius plots have slopes that differ with pixel resistivity

Keywords

II-VI semiconductors; cadmium compounds; gamma-ray detection; nuclear electronics; position sensitive particle detectors; semiconductor counters; zinc compounds; 1.5 mm; 25 mm; Arrhenius plots; CdZnTe; DC currents; detector crystal properties; gamma ray detection; gated integrator; hybrid detector array; leakage current; multiplexer readout; pixel I-V curves; pixel arrays; readout technique; semiconductor detector; Conductivity; Current measurement; Detectors; Leakage current; Material properties; Multiplexing; Sensor arrays; Size measurement; Tellurium; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1997. IEEE

Conference_Location

Albuquerque, NM

ISSN

1082-3654

Print_ISBN

0-7803-4258-5

Type

conf

DOI

10.1109/NSSMIC.1997.672586

Filename

672586