High collection efficiency CVD diamond alpha detectors

Advances in chemical vapour deposited (CVD) diamond have enabled the routine use of this material for sensor device fabrication, allowing exploitation of its extreme physical properties. A consequence of CVD diamond growth on silicon is the formation of polycrystalline films which has a profound influence on the physical and electronic properties. We report the optimisation of physical and geometrical device parameters for radiation detection in the counting mode. Sandwich and co-planar electrode geometries are tested and their performances evaluated with regard to the nature of the field profile and drift distances inherent in such devices. The carrier drift length before trapping was measured under alpha particles and values as high as 40% of the overall film thickness are reported. Further, by optimising the device geometry, we show that a gain in collection efficiency, defined as the induced charge divided by the deposited charge within the material, can be achieved even though lower bias values are used