DocumentCode
3232140
Title
Polysilicon overfill etch back using wet chemical spin-process technology. An alternative to traditional dry etch and CMP technigues
Author
Sax, Harald ; Kruwinus, Hans ; Waters, Edward A.
Author_Institution
SEZ AG, Villach, Austria
fYear
1999
fDate
1999
Firstpage
233
Lastpage
238
Abstract
Wet chemical etch techniques have been used in semiconductor manufacturing since the advent of the industry. As device geometry´s have shrunk, wet etching has been replaced by various dry etch and chemical mechanical polishing (CMP) techniques. In most cases it has been relegated to non-critical bulk film removal applications. Recent innovations in single wafer wet processing hardware and chemistries have given new life and applications to traditional wet etch techniques. In this study we investigated the feasibility of using a single wafer spin-processor chemically enhanced polish (CEP) system with automated endpoint capability for the removal and planarization of polysilicon over-fill in a deep trench isolation application as an alternative to dry etch and CMP techniques
Keywords
elemental semiconductors; etching; integrated circuit manufacture; isolation technology; polishing; process control; silicon; HF; HNO3; Si; automated endpoint capability; deep trench isolation application; optimal process control; planarization; polysilicon overfill etch back; single wafer spin-processor chemically enhanced polish system; single wafer wet processing hardware; structure dimensions; wet chemical spin-process technology; Chemical industry; Dry etching; Geometry; Hardware; Manufacturing industries; Planarization; Semiconductor device manufacture; Semiconductor films; Technological innovation; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location
Boston, MA
ISSN
1078-8743
Print_ISBN
0-7803-5217-3
Type
conf
DOI
10.1109/ASMC.1999.798231
Filename
798231
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