Title :
Development of radiation-hard preamplifier chip for BELLE SVD
Author :
Yokoyama, M. ; Tajima, H. ; Aihara, H. ; Ikeda, H. ; Saitoh, Y. ; Inoue, M. ; Yamanaka, J.
Author_Institution :
Dept. of Phys., Tokyo Univ., Japan
Abstract :
We have studied the radiation hardness of preamplifier VLSI and MOS transistors fabricated with the rapid thermal nitridation process and low temperature grown thin (15 nm) oxide. Tungsten-silicide is used as a gate material. These processes are used to fabricate front-end preamplifier chips for the BELLE silicon vertex detector. Significant improvement in radiation hardness has been observed for some transistors
Keywords :
CMOS analogue integrated circuits; MOSFET; VLSI; gamma-ray effects; nitridation; preamplifiers; radiation hardening (electronics); rapid thermal processing; silicon radiation detectors; BELLE Si vertex detector; MOS transistors; SMAASH; Si; W-Si; gamma irradiation; preamplifier VLSI; radiation hardness; rapid thermal nitridation; Atomic measurements; Bonding; Charge carrier processes; Degradation; Detectors; Electron traps; Hydrogen; Preamplifiers; Silicon; Very large scale integration;
Conference_Titel :
Nuclear Science Symposium, 1997. IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4258-5
DOI :
10.1109/NSSMIC.1997.672629
