DocumentCode
323229
Title
Development of radiation-hard preamplifier chip for BELLE SVD
Author
Yokoyama, M. ; Tajima, H. ; Aihara, H. ; Ikeda, H. ; Saitoh, Y. ; Inoue, M. ; Yamanaka, J.
Author_Institution
Dept. of Phys., Tokyo Univ., Japan
fYear
1997
fDate
9-15 Nov 1997
Firstpage
482
Abstract
We have studied the radiation hardness of preamplifier VLSI and MOS transistors fabricated with the rapid thermal nitridation process and low temperature grown thin (15 nm) oxide. Tungsten-silicide is used as a gate material. These processes are used to fabricate front-end preamplifier chips for the BELLE silicon vertex detector. Significant improvement in radiation hardness has been observed for some transistors
Keywords
CMOS analogue integrated circuits; MOSFET; VLSI; gamma-ray effects; nitridation; preamplifiers; radiation hardening (electronics); rapid thermal processing; silicon radiation detectors; BELLE Si vertex detector; MOS transistors; SMAASH; Si; W-Si; gamma irradiation; preamplifier VLSI; radiation hardness; rapid thermal nitridation; Atomic measurements; Bonding; Charge carrier processes; Degradation; Detectors; Electron traps; Hydrogen; Preamplifiers; Silicon; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1997. IEEE
Conference_Location
Albuquerque, NM
ISSN
1082-3654
Print_ISBN
0-7803-4258-5
Type
conf
DOI
10.1109/NSSMIC.1997.672629
Filename
672629
Link To Document