Evaluation of p-stop structures in the n-side of n-on-n silicon strip detectors

Author

Unno, Y. ; Kitabayashi, H. ; Dick, B. ; Dubbs, T. ; Grillo, A. ; Ikeda, M. ; Iwata, Y. ; Kashigin, S. ; Kitayama, E. ; Kroeger, W. ; Kohriki, T. ; Kondo, T. ; Moorhead, G. ; Morgan, D. ; Nakano, I. ; Ohmoto, T. ; Ohsugi, T. ; Phillips, P. ; Richardson, J.

Author_Institution

Inst. of Particle & Nucl. Studies, High Energy Accelerator Organ., Ibaraki, Japan

fYear

1997

fDate

9-15 Nov 1997

Firstpage

541

Abstract

A large area (63.6 mm×64 mm) n-on-n silicon strip detector was fabricated, implementing various p-stop structures in the n-side. The detectors were characterized in laboratory and in beam tests. The inter-strip capacitance showed features in which the individual p-stop structure had the longest tail toward saturation. The beam tests showed other p-stop structures collected more charge in the mid-strip region than the individual p-stop structure. In addition, there was a source which lost or spread charge and induced noise where the over-depletion was insufficient

Keywords

capacitance; silicon radiation detectors; Si; inter-strip capacitance; n-on-n Si strip detectors; n-side; p-stop structure; p-stop structures; Capacitance; Cyclotrons; Detectors; Implants; Laboratories; Particle accelerators; Physics education; Prototypes; Silicon; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1997. IEEE

Conference_Location

Albuquerque, NM

ISSN

1082-3654

Print_ISBN

0-7803-4258-5

Type

conf

DOI

10.1109/NSSMIC.1997.672641

Filename

672641