Title :
Analysis of hot-carrier-induced degradation and snapback in submicron 50 V lateral MOS transistors
Author :
Ludikhuize, A.W. ; Slotboom, M. ; Nezar, A. ; Nowlin, N. ; Brock, R.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
Hot-carrier-induced problems for 50 V ENMOS and LDMOS devices implemented in a 0.8 μm CMOS process have been analyzed by monitoring the backgate current and by using 2D high-voltage on-state device simulations
Keywords :
hot carriers; power MOSFET; semiconductor device models; 0.8 mum; 2D high-voltage on-state device simulations; 50 V; CMOS process; ENMOS devices; LDMOS devices; backgate current; hot-carrier-induced degradation; snapback; submicron 50 V lateral MOS transistors; Analytical models; CMOS process; Current measurement; Degradation; Hot carriers; MOS devices; MOSFETs; Monitoring; Semiconductor optical amplifiers; Testing;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601430
