Fabrication of TiO2 Schottky barrier diodes by RF magnetron sputtering

Author

Xue, Hailin ; Chen, Weiyou ; Liu, Caixia ; Kong, Xiangzi ; Qu, Pengfei ; Liu, Ziran ; Zhou, Jingran ; Shen, Liang ; Zhong, Zhicheng ; Ruan, Shengping

Author_Institution

State Key Lab. on Integrated Optoelectron., Jilin Univ., Jilin

fYear

2008

fDate

6-9 Jan. 2008

Firstpage

108

Lastpage

111

Abstract

Titanium dioxide thin films were prepared by sol-gel method on Si (110) substrates after annealed at 650 degC. Schottky diodes of Cr/TiO₂, Au//TiO₂ and Ni/TiO₂ were fabricated by RF magnetron sputtering, and the electrical properties of the diodes were investigated. The effective barriers Phi_b and ideal factors n were calculated from thermionic emission model, and it was found that the height of Schottky barriers was dependent on the work function of sputtering metals.

Keywords

Schottky barriers; Schottky diodes; sputtering; thermionic emission; titanium compounds; Au-TiO₂; Cr-TiO₂; Ni-TiO₂; RF magnetron sputtering; Schottky barrier diode; electrical properties; sol-gel method; thermionic emission model; titanium dioxide thin film; Annealing; Chromium; Fabrication; Gold; Magnetic properties; Radio frequency; Schottky diodes; Semiconductor thin films; Sputtering; Titanium; Schottky barrier diode; TiO2; sol-gel;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on

Conference_Location

Sanya

Print_ISBN

978-1-4244-1907-4

Electronic_ISBN

978-1-4244-1908-1

Type

conf

DOI

10.1109/NEMS.2008.4484297

Filename

4484297