Title :
A new level-shifting technique by divided RESURF structure
Author :
Terashima, Tomohide ; Shimizu, Kazuhiro ; Hine, Shiro
Author_Institution :
Mitsubishi Electr. Corp., Itami, Japan
Abstract :
An n-channel lateral DMOSFET (n-ch LDMOSFET) for 1200 V level-shifting has been developed by using a divided RESURF structure. A p-channel lateral MOSFET (p-ch LMOSFET) for 1200 V level-shifting has been realized by combining a RESURF structure and a p- Lightly Doped Drain (p- LDD) which is formed in a part of the RESURF structure. 1200 V level-shifting of these devices have been confirmed by circuit experiments. Furthermore, these structures have no limit of level shifting voltage basically
Keywords :
characteristics measurement; isolation technology; power MOSFET; semiconductor doping; 1200 V; breakdown voltage; circuit experiments; divided RESURF structure; level shifting voltage; level-shifting technique; n-channel lateral DMOSFET; p-channel lateral MOSFET; p- lightly doped drain; Breakdown voltage; Dielectric breakdown; Electrodes; Leakage current; Logic devices; MOSFET circuits; Voltage control; Wire;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601431
