Title :
Correlation of ellipsometric volume fraction to polysilicon grain size from transmission electron microscopy
Author :
Carbone, Thomas A. ; Plourde, Peter ; Karagiannis, Eva
Author_Institution :
Fairchild Semicond., South Portland, ME, USA
Abstract :
The actual grain size of polysilicon films as obtained by TEM is correlated to an ellipsometric method using volume fraction and effective medium approximation modeling. The deposition temperature of polysilicon thin films was evaluated using volume fraction. It was determined that as the temperature decreased, and the film approaches an amorphous layer, the volume fraction increased. The volume fraction method is also shown to be useful for post implantation and anneal monitoring of polysilicon morphology. The growth of polysilicon films following anneal and also doping and anneal can be monitored very accurately with the volume fraction measurement
Keywords :
CVD coatings; annealing; chemical vapour deposition; elemental semiconductors; ellipsometry; grain size; ion implantation; process monitoring; semiconductor thin films; silicon; transmission electron microscopy; LPCVD; Si; amorphous layer; deposition temperature; effective medium approximation modeling; ellipsometric volume fraction; in-line monitoring; polysilicon films; polysilicon grain size; polysilicon morphology; post anneal monitoring; post implantation monitoring; transmission electron microscopy; Annealing; Conductivity; Doping; Electrons; Grain boundaries; Grain size; Monitoring; Resistors; Size control; Temperature;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-5217-3
DOI :
10.1109/ASMC.1999.798265
