Title :
Analytical Modeling of Electron Mobility in Strained Germanium
Author :
Dhar, S. ; Ungersboeck, E. ; Kosina, H. ; Grasser, T. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Wien
Abstract :
An analytical model for the low-field bulk electron mobility tensor in strained germanium is presented. The model includes the effects of strain-induced splitting of the conduction band valleys in germanium and the corresponding inter-valley scattering reduction as well as temperature and doping dependence. Bulk mobility values larger than 2.5 times the strained silicon values has been predicted. The results obtained from the model have been verified using Monte Carlo simulations
Keywords :
Monte Carlo methods; conduction bands; doping profiles; electron mobility; elemental semiconductors; germanium; Ge; Monte Carlo simulations; conduction band valleys; electron mobility tensor; inter-valley scattering reduction; low-field bulk electron mobility modeling; strain-induced splitting effects; strained germanium; strained silicon values; Analytical models; Capacitive sensors; Compressive stress; Electron mobility; Germanium; Scattering; Semiconductor process modeling; Silicon; Temperature dependence; Tensile stress;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282833
