Title :
Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs
Author :
Ungersboeck, E. ; Sverdlov, V. ; Kosina, H. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., TU Wien
Abstract :
The origin of the enhancement of electron mobility in inversion layers on (001) and (110) oriented Si substrates under uniaxial stress has been investigated by solving the Boltzmann equation using the Monte Carlo method. Taking into account carrier repopulation, strain induced change of intersubband scattering and of electron effective mass, the experimentally observed mobility variation under uniaxial stress can be explained. Band structure calculations were performed to quantify the influence of stress on the effective masses. The experimentally observed pronounced anisotropy of the mobility induced by uniaxial stress for both substrate orientations is well reproduced by simulations. While on (110) substrate the anisotropy stems from the ellipsoidal shape of the lowest subband ladder, an effective mass change induced by [110] stress is responsible for the anisotropic mobility on the (001) substrate
Keywords :
Boltzmann equation; MOSFET; Monte Carlo methods; band structure; effective mass; electron mobility; internal stresses; inversion layers; semiconductor device models; Boltzmann equation; MOSFET; Monte Carlo method; Si; anisotropic mobility; band structure calculations; carrier repopulation; electron effective mass; electron inversion layer mobility enhancement; intersubband scattering; strain induced change; subband ladder; substrate orientations; uniaxial stress; Anisotropic magnetoresistance; Capacitive sensors; Effective mass; Electron mobility; MOSFETs; Piezoresistance; Scattering; Shape; Tensile stress; Uniaxial strain;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282834
