DocumentCode :
3232816
Title :
Modeling and electrical characterization of parasitic effects for GaAs integrated circuits. Experimental validation and CAD formulas
Author :
Hassaine, N. ; Lecours, M. ; Delisle, G.Y.
Author_Institution :
Dept. of Electr. Eng., Laval Univ., Que., Canada
fYear :
1995
fDate :
16-20 May 1995
Firstpage :
1077
Abstract :
This study investigates the computing of the inductance and capacitance coefficients of short links (gold wire connections, vias, interconnection crossing and coupled lines). The [L] and [C] matrix calculations are performed with the vector and scalar potential given in an integral form, taking into account the current density distribution on the conductors. Analytical formulas easy to use in CAD are derived from the numerical results using a least square method. The formulas have been shown to agree, with a precision in the order of 3%, with simulation results and with experimental results obtained on test boards in the frequency range 1-30 GHz.<>
Keywords :
III-VI semiconductors; MMIC; circuit CAD; circuit analysis computing; gallium arsenide; integrated circuit design; integrated circuit interconnections; integrated circuit packaging; least squares approximations; 1 to 30 GHz; CAD formulas; GaAs; capacitance coefficients; coupled lines; current density distribution; electrical characterization; inductance coefficients; interconnection crossing; least square method; parasitic effects; test boards; vector potential; vias; Bonding; Conductors; Fabrication; Gallium arsenide; Inductance; Integrated circuit interconnections; Integrated circuit modeling; Least squares methods; Parasitic capacitance; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-2581-8
Type :
conf
DOI :
10.1109/MWSYM.1995.406158
Filename :
406158
Link To Document :
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