Title :
Investigation on micromachining technology compatibility of PECVD SiO2/Si3N4 double-layer electrets
Author :
Liu, Jin ; Lv, Zhiqiu ; Zhang, Jinwen
Author_Institution :
Nat. Key Lab. of Nano/Micro Fabrication Technol., Peking Univ., Beijing
Abstract :
In this paper PECVD SiO2/Si3N4 double-layer electrets were investigated for their compatibility with micromachining technology, such as conventional lithography and etching techniques. After the experiments, we find that no matter under what condition, either high temperature or high humid condition, could H3PO4 improve the charge stability of SiO2/Si3N4 double-layer electrets a little. RIE and oxygen plasma stripping reduce the charge stability significantly. Acetone stripping does not influence the charge stability in high temperature and high humidity. The other techniques, such as BHF, fuming nitric acid stripping, corrosive of Al and Au etc., decrease the charge stability a little.
Keywords :
etching; lithography; micromachining; plasma CVD; silicon compounds; BHF; H3PO4; PECVD; RIE; SiO2-Si3N4; acetone stripping; charge stability; double-layer electrets; etching techniques; fuming nitric acid stripping; lithography techniques; micromachining technology compatibility; oxygen plasma stripping; Electrets; Etching; Gold; Humidity; Lithography; Micromachining; Plasma stability; Plasma temperature; Substrates; Surface treatment; PECVD; SiO2/Si3N4 double-layer; charge stability; electret; micromachining technology;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
Conference_Location :
Sanya
Print_ISBN :
978-1-4244-1907-4
Electronic_ISBN :
978-1-4244-1908-1
DOI :
10.1109/NEMS.2008.4484323
