Title :
Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si
Author :
Kim, Yonghyun ; Hwang, Gyeong ; Banerjee, Sanjay K.
Author_Institution :
Microelectron. Res. Center, Texas A&M Univ., Austin, TX
Abstract :
We investigate As-vacancy deactivation and interstitial-mediated As diffusion in strained Si by using density functional theory calculation. First, we find that biaxial tensile strain will not have a significant effect on the binding energies of As-vacancies. Second, tensile strain increases the stability of the diffusing As-Sii pairs. Our results could be one of the reasons that explain why As activation/deactivation and interstitial-mediated As TED has a weak dependence on biaxial tensile strain experimentally
Keywords :
ab initio calculations; arsenic; binding energy; density functional theory; diffusion; elemental semiconductors; interstitials; semiconductor process modelling; silicon; tensile strength; vacancies (crystal); Si-As; ab initio calculation; biaxial tensile strain; binding energies; density functional theory calculation; interstitial-mediated arsenic diffusion; strained silicon; transient enhanced diffusion; vacancy deactivation; Annealing; Capacitive sensors; Computational modeling; Density functional theory; Lattices; MOSFET circuits; Microelectronics; Silicon; Stability; Tensile strain; arsenic; deactivation; diffusion; silicon; strain;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
DOI :
10.1109/SISPAD.2006.282843
