• DocumentCode
    323298
  • Title

    Pulse height of MIPs in an n-side silicon microstrip detector after proton irradiation with a fluence of 1×1015 p cm-2

  • Author

    Gomez, A. ; Kroeger, W. ; Nissen, T. ; Sadrozinski, H.F.-W. ; Wichmann, R. ; Emes, J. ; Gilchriese, M.G.D. ; Siegrist, J. ; Wappler, F. ; Unno, Y. ; Ohsugi, T.

  • Author_Institution
    SCIPP, California Univ., Santa Cruz, CA, USA
  • fYear
    1997
  • fDate
    9-15 Nov 1997
  • Firstpage
    860
  • Abstract
    We have irradiated a n-side silicon microstrip detector with 55 MeV protons up to an equivalent fluence of 1×1015 p cm -2 high energy protons. We determine the median pulse height to be 0.7 fC at 180 V bias and deduce a depletion region of about 80 μm
  • Keywords
    proton detection; proton effects; silicon radiation detectors; Si; depletion region; high energy protons; median pulse height; n-side silicon microstrip detector; proton irradiation; pulse height; Detectors; Microstrip; Particle beam measurements; Particle beams; Particle measurements; Protons; Pulse measurements; Silicon; Strips; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium, 1997. IEEE
  • Conference_Location
    Albuquerque, NM
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-4258-5
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1997.672717
  • Filename
    672717
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=323298