Title :
Pulse height of MIPs in an n-side silicon microstrip detector after proton irradiation with a fluence of 1×1015 p cm-2
Author :
Gomez, A. ; Kroeger, W. ; Nissen, T. ; Sadrozinski, H.F.-W. ; Wichmann, R. ; Emes, J. ; Gilchriese, M.G.D. ; Siegrist, J. ; Wappler, F. ; Unno, Y. ; Ohsugi, T.
Author_Institution :
SCIPP, California Univ., Santa Cruz, CA, USA
Abstract :
We have irradiated a n-side silicon microstrip detector with 55 MeV protons up to an equivalent fluence of 1×1015 p cm -2 high energy protons. We determine the median pulse height to be 0.7 fC at 180 V bias and deduce a depletion region of about 80 μm
Keywords :
proton detection; proton effects; silicon radiation detectors; Si; depletion region; high energy protons; median pulse height; n-side silicon microstrip detector; proton irradiation; pulse height; Detectors; Microstrip; Particle beam measurements; Particle beams; Particle measurements; Protons; Pulse measurements; Silicon; Strips; Voltage;
Conference_Titel :
Nuclear Science Symposium, 1997. IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4258-5
DOI :
10.1109/NSSMIC.1997.672717
